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RoHS
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Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 7.7A TO220FP
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Inventory: 4989
Minimum: 1
Total Price: USD $1.69
Unit Price: USD $1.69176
≥1 USD $1.69176
≥10 USD $1.38852
≥100 USD $1.34463
≥500 USD $1.301738
≥1000 USD $1.257848

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Supplier Device Package TO-220-3
Weight 6.000006g

Dimensions

Height 9.8mm
Length 10.63mm
Width 4.83mm

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.7A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 52ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 860pF
Drain to Source Resistance 300mOhm
Rds On Max 300 mΩ
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