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IRFBC40

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 6.2A TO-220AB
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.3nF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω

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