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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 20A TO-247AC
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Inventory: 129841
Minimum: 1
Total Price: USD $1.8
Unit Price: USD $1.804478
≥1 USD $1.804478
≥10 USD $1.48029
≥100 USD $1.434405
≥500 USD $1.38852
≥1000 USD $1.341638

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Weight 38.000013g

Dimensions

Height 20.7mm
Length 15.87mm
Width 5.31mm

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 20A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 280W Tc
Element Configuration Single
Power Dissipation 280W
Turn On Delay Time 18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 3.1nF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
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