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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 38A TO-220AB
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Inventory: 54435
Minimum: 1
Total Price: USD $2.18
Unit Price: USD $2.177543
≥1 USD $2.177543
≥10 USD $1.78752
≥100 USD $1.73166
≥500 USD $1.6758
≥1000 USD $1.61994

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 34A
Drain-source On Resistance-Max 0.026Ohm
DS Breakdown Voltage-Min 30V
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