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STD8NM60N-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 7A IPAK
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Inventory: 82539
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.296258
≥1 USD $0.296258
≥10 USD $0.24339
≥100 USD $0.23541
≥500 USD $0.228428
≥1000 USD $0.220448

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh? II
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD8N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 28A
Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 3 V

Alternative Model

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