Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series DeepGATE?, STripFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature AVALANCE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Base Part Number STL25
Pin Count 8
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 80W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 13.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 63m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 5.1 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.4 ns
Turn-Off Delay Time 39.7 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.063Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 125 mJ