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IPT020N10N5ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerSFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description TRENCH >=100V
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Inventory: 8232
Minimum: 1
Total Price: USD $2.49
Unit Price: USD $2.486018
≥1 USD $2.486018
≥10 USD $2.4129
≥100 USD $2.339781
≥500 USD $2.248384

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerSFN
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Series OptiMOS?5
Part Status Active
Number of Terminations 8
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 273W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 202μA
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 31A Ta 260A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 1039A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 406 mJ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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