Operating Temperature -55°C~175°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 480W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230A Tc
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V