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IXTA160N10T

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 160A TO-263
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Inventory: 2661
Minimum: 1
Total Price: USD $15.51
Unit Price: USD $15.50514
≥1 USD $15.50514
≥10 USD $12.722115
≥100 USD $12.32511
≥500 USD $11.927108
≥1000 USD $11.529105

Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchMV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 430W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 430W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Rise Time 61ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 160A
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 430A
Avalanche Energy Rating (Eas) 500 mJ

Compliance

RoHS Status ROHS3 Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Alternative Model

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