Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1207pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.4A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V