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IXTQ50N20P

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 50A TO-3P
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Inventory: 217
Minimum: 1
Total Price: USD $4.93
Unit Price: USD $4.93416
≥1 USD $4.93416
≥10 USD $3.910064
≥100 USD $3.351422
≥500 USD $2.97905
≥1000 USD $2.550813
≥3000 USD $2.401865

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series PolarHT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 1000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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