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TK12A60W,S4VX

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 600V 11.5A TO-220SIS
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Inventory: 186
Minimum: 1
Total Price: USD $3.43
Unit Price: USD $3.42804
≥1 USD $3.42804
≥10 USD $2.719332
≥100 USD $2.33079
≥500 USD $2.07183
≥1000 USD $1.774007
≥3000 USD $1.670417

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Capacitance 890pF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 3.7V @ 600μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 300V
Current - Continuous Drain (Id) @ 25°C 11.5A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 11.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction

Alternative Model

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