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IPA65R095C7XKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V TO220-3
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Inventory: 318
Minimum: 1
Total Price: USD $5.47
Unit Price: USD $5.47008
≥1 USD $5.47008
≥10 USD $4.595052
≥100 USD $3.717622
≥500 USD $3.304557
≥1000 USD $2.829538
≥3000 USD $2.664308

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 95m Ω @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 590μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2140pF @ 400V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.095Ohm
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 118 mJ

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