Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 71 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 200A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10990pF @ 40V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 4.5V
Rise Time 590 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 240A
JEDEC-95 Code TO-263CB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 380A
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 250 mJ