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R6025ANZC8

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 25A TO3PF
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 25A
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 39 mJ

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