Operating Temperature -55?°C~150?°C TJ
Packaging Tube
Published 2013
Series HiPerFETa??, Polar3a??
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m ?? @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ?±30V
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.3Ohm
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 300 mJ