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IXFP4N100PM
IXYSRoHS
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Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISCMOSFETN-CH HIPERFET-POLA TO-
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Inventory: 2370
Minimum: 1
Total Price: USD $17.42
Unit Price: USD $17.419343
≥1 USD $17.419343
≥10 USD $14.293178
≥100 USD $13.846298
≥500 USD $13.399418
≥1000 USD $12.953535
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.1A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 2.5A
Pulsed Drain Current-Max (IDM) 8A
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 200 mJ
Alternative Model
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