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IPB60R099CPAATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 31A TO263-3
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Inventory: 503
Minimum: 1
Total Price: USD $3.53
Unit Price: USD $3.533623
≥1 USD $3.533623
≥10 USD $3.429693
≥100 USD $3.325763
≥500 USD $3.195851

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series CoolMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 255W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 255W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 31A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 800 mJ

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