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IXTQ32P20T

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description DISCMSFT PCHAN-TRENCH GATE TO-3P
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.13Ohm
Pulsed Drain Current-Max (IDM) 96A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 1000 mJ

Physical

Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Alternative Model

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