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TK31V60W,LVQ

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 4-VSFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
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Inventory: 2623
Minimum: 1
Total Price: USD $7.83
Unit Price: USD $7.82628
≥1 USD $7.82628
≥10 USD $6.705468
≥100 USD $5.587982
≥500 USD $4.930556
≥1000 USD $4.437501

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 240W Tc
Element Configuration Single
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 98mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
Current - Continuous Drain (Id) @ 25°C 30.8A Ta
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 165 ns
Continuous Drain Current (ID) 30.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 3nF
FET Feature Super Junction
Drain to Source Resistance 78mOhm
Rds On Max 98 mΩ

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