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IXTQ96N25T

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 96A TO-3P
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Inventory: 1007
Minimum: 1
Total Price: USD $14.1
Unit Price: USD $14.095673
≥1 USD $14.095673
≥10 USD $11.566013
≥100 USD $11.20392
≥500 USD $10.842825
≥1000 USD $10.48173

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series TrenchHV?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 625W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 96A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 96A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 2000 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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