Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series GigaMOS?, HiPerFET?, TrenchT2?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 7
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 480W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230A Tc
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 230A
Drain-source On Resistance-Max 0.0042Ohm
Pulsed Drain Current-Max (IDM) 700A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 850 mJ