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TK20E60W,S1VX

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Inventory: 170
Minimum: 1
Total Price: USD $4.63
Unit Price: USD $4.62924
≥1 USD $4.62924
≥10 USD $3.671976
≥100 USD $3.147421
≥500 USD $2.797687
≥1000 USD $2.395526
≥3000 USD $2.255642

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2013
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 165W Tc
Element Configuration Single
Turn On Delay Time 50 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 155m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 300V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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