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IXTA220N04T2-7

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 220A TO-263-7
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Inventory: 9241
Minimum: 1
Total Price: USD $11.28
Unit Price: USD $11.276738
≥1 USD $11.276738
≥10 USD $9.25281
≥100 USD $8.963535
≥500 USD $8.67426
≥1000 USD $8.384985

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchT2?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Rise Time 21ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 220A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 660A
Avalanche Energy Rating (Eas) 600 mJ

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