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IRFBF30

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 3.6A TO-220AB
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Inventory: 9017
Minimum: 1
Total Price: USD $1.16
Unit Price: USD $1.162088
≥1 USD $1.162088
≥10 USD $0.95361
≥100 USD $0.923685
≥500 USD $0.89376
≥1000 USD $0.863835

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
Element Configuration Single
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.2nF
Drain to Source Resistance 3.7Ohm
Rds On Max 3.7 Ω

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