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IXTQ10P50P

IXYS
RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 500V 10A TO-3P
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Inventory: 315
Minimum: 1
Total Price: USD $6.72
Unit Price: USD $6.71748
≥1 USD $6.71748
≥10 USD $5.359505
≥100 USD $4.795256
≥500 USD $4.23107
≥1000 USD $3.80797
≥3000 USD $3.568211

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series PolarP?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage -500V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 1500 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Transistor Element Material SILICON

Alternative Model

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