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IXTP02N50D

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 0.2A TO-220
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Inventory: 190
Minimum: 1
Total Price: USD $6.15
Unit Price: USD $6.15384
≥1 USD $6.15384
≥10 USD $5.163312
≥100 USD $4.177034
≥500 USD $3.712946
≥1000 USD $3.179216
≥3000 USD $2.993566

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.1W Ta 25W Tc
Element Configuration Single
Power Dissipation 25W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 50mA, 0V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 200mA
JEDEC-95 Code TO-220AD
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 0.8A
FET Feature Depletion Mode

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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