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IPW60R024P7XKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description HIGH POWER_NEW
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Inventory: 350
Minimum: 1
Total Price: USD $6.12
Unit Price: USD $6.119796
≥1 USD $6.119796
≥10 USD $5.939802
≥100 USD $5.759808
≥500 USD $5.534815

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Series CoolMOS? P7
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 291W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 42.4A, 10V
Vgs(th) (Max) @ Id 4V @ 2.03mA
Input Capacitance (Ciss) (Max) @ Vds 7144pF @ 400V
Current - Continuous Drain (Id) @ 25°C 101A Tc
Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 101A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 386A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 406 mJ
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