Number of Elements 1
Power Dissipation 370W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 5.28nF
Packaging Tube
Published 1997
Series POWER MOS V?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 32A