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IXFK420N10T

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-Channel 100 V 420 A 2.6 mO GigaMOS HiPerFET Power Mosfet - TO-264AA
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Inventory: 8079
Minimum: 1
Total Price: USD $17.59
Unit Price: USD $17.590724
≥1 USD $17.590724
≥10 USD $16.595019
≥100 USD $15.655679
≥500 USD $14.76951
≥1000 USD $13.9335
≥3000 USD $13.144814

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS? HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1670W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 47000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 420A Tc
Gate Charge (Qg) (Max) @ Vgs 670nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 420A
Drain-source On Resistance-Max 0.0026Ohm
Pulsed Drain Current-Max (IDM) 1000A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 5000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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