TK16C60W,S1VQ

Toshiba Semiconductor and Storage

RoHS

RoHS compliant

Package TO-262-3 Long Leads, I2Pak, TO-262AA

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A

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Technical Details

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins 3

Weight 2.387001g

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ

Packaging Tube

Published 2015

Series DTMOSIV

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Technology MOSFET (Metal Oxide)

Number of Channels 1

Power Dissipation-Max 130W Tc

Element Configuration Single

Turn On Delay Time 50 ns

FET Type N-Channel

Rds On (Max) @ Id, Vgs 190m Ω @ 7.9A, 10V

Vgs(th) (Max) @ Id 3.7V @ 790μA

Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V

Current - Continuous Drain (Id) @ 25°C 15.8A Ta

Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V

Rise Time 25ns

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Fall Time (Typ) 5 ns

Turn-Off Delay Time 100 ns

Continuous Drain Current (ID) 15.8A

Gate to Source Voltage (Vgs) 30V

Drain to Source Breakdown Voltage 600V

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