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IXFK32N100P

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 32A TO-264
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Inventory: 5496
Minimum: 1
Total Price: USD $22.34
Unit Price: USD $22.34001
≥1 USD $22.34001
≥10 USD $18.331058
≥100 USD $17.757495
≥500 USD $17.18493
≥1000 USD $16.612365
≥3000 USD $14.893673

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 960W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 55 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.32Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 1500 mJ

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