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IXFX32N80Q3

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
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Inventory: 3395
Minimum: 1
Total Price: USD $26.72
Unit Price: USD $26.718107
≥1 USD $26.718107
≥10 USD $25.205767
≥100 USD $23.779019
≥500 USD $22.433033
≥1000 USD $21.163251

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1000W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1kW
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 300ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 3000 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 21.34mm
Length 16.13mm
Width 5.21mm

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