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IXFR12N100Q

IXYS
RoHS
RoHS RoHS compliant
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) ISOPLUS247
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Inventory: 7061
Minimum: 1
Total Price: USD $5.01
Unit Price: USD $5.013435
≥1 USD $5.013435
≥10 USD $4.11369
≥100 USD $3.985013
≥500 USD $3.856335
≥1000 USD $3.727658

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 48A

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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