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IXTF6N200P3

IXYS
RoHS
/
Package ISOPLUSi5-Pak?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH
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Technical Details

Physical

Mounting Type Through Hole
Package / Case ISOPLUSi5-Pak?

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Polar?
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 215W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Drain to Source Voltage (Vdss) 2000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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