Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
Series POWER MOS 7?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 75mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 290W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 290W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5590pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Rise Time 20 ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 2500 mJ