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IXFN21N100Q

IXYS
RoHS
RoHS RoHS compliant
Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 21A SOT-227B
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Inventory: 1360
Minimum: 1
Total Price: USD $24.88
Unit Price: USD $24.879341
≥1 USD $24.879341
≥10 USD $23.471075
≥100 USD $22.142525
≥500 USD $20.889177
≥1000 USD $19.706771

Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 2500 mJ

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