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IXFK30N100Q2

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 30A TO-264
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Inventory: 8815
Minimum: 1
Total Price: USD $2.62
Unit Price: USD $2.622765
≥1 USD $2.622765
≥10 USD $2.4743
≥100 USD $2.334255
≥500 USD $2.202118
≥1000 USD $2.077474

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 400mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 735W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 735W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 60 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 120A
Dual Supply Voltage 1kV
Avalanche Energy Rating (Eas) 4000 mJ
Nominal Vgs 5 V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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