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IXTK46N50L

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 46A TO-264
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Inventory: 855
Minimum: 1
Total Price: USD $41.52
Unit Price: USD $41.51532
≥1 USD $41.51532
≥10 USD $34.786382
≥100 USD $32.467327

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 160MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 700W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection DRAIN
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 500mA, 20V
Vgs(th) (Max) @ Id 6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 15V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 1500 mJ

Dimensions

Height 26.16mm
Length 19.96mm
Width 5.13mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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