Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series GigaMOS?, HiPerFET?, TrenchT2?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 21
JESD-30 Code R-PDSO-G21
Number of Elements 1
Power Dissipation-Max 600W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 58 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.3m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 168A Tc
Gate Charge (Qg) (Max) @ Vgs 378nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 168A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.0083Ohm
Pulsed Drain Current-Max (IDM) 630A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 3000 mJ