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IXFB40N110P

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1100V 40A PLUS264
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Inventory: 7941
Minimum: 1
Total Price: USD $20.06
Unit Price: USD $20.056344
≥1 USD $20.056344
≥10 USD $18.921074
≥100 USD $17.850074
≥500 USD $16.83969
≥1000 USD $15.8865
≥3000 USD $14.987259

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V
Rise Time 55 ns
Drain to Source Voltage (Vdss) 1100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.26Ohm
Drain to Source Breakdown Voltage 1.1kV
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 2000 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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