Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series GigaMOS?, HiPerFET?, TrenchT2?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 21
JESD-30 Code R-PDSO-G21
Number of Elements 1
Power Dissipation-Max 570W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 23800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 132A Tc
Gate Charge (Qg) (Max) @ Vgs 364nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 132A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 130A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 500A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 3000 mJ