Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 21
JESD-30 Code R-PDSO-G21
Number of Elements 1
Power Dissipation-Max 694W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 245m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 264nC @ 10V
Rise Time 30 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 4000 mJ