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IXTX3N250L

IXYS
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET DISCRETE TO-247P
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 417W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drain to Source Voltage (Vdss) 2500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

Physical

Mounting Type Through Hole
Package / Case TO-247-3

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