Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 49A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 730W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 730W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 125m Ω @ 24.5A, 12V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 12V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 49A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3000 mJ