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TK6A60W,S4VX

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N CH 600V 6.2A TO-220SIS
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Inventory: 154
Minimum: 1
Total Price: USD $1.94
Unit Price: USD $1.9404
≥1 USD $1.9404
≥10 USD $1.562299
≥100 USD $1.285469
≥500 USD $1.087714
≥1000 USD $0.92291
≥3000 USD $0.876765

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Capacitance 390pF
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 30W Tc
Element Configuration Single
Power Dissipation 30W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 3.7V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 300V
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 6.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
FET Feature Super Junction

Compliance

RoHS Status RoHS Compliant

Alternative Model

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