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IPI90R500C3XKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 11A TO-262
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 740μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 100V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.5Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 900V
Avalanche Energy Rating (Eas) 388 mJ

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