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TK13E25D,S1X(S

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 13A TO-220AB
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Inventory: 218
Minimum: 1
Total Price: USD $0.26
Unit Price: USD $0.264073
≥1 USD $0.264073
≥10 USD $0.256306
≥100 USD $0.248539
≥500 USD $0.23883

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 102W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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