Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Pbfree Code yes
Part Status Active
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 54pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.1A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 0.4A