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TK72E12N1,S1X

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
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Inventory: 163
Minimum: 1
Total Price: USD $2.18
Unit Price: USD $2.18064
≥1 USD $2.18064
≥10 USD $1.755415
≥100 USD $1.444397
≥500 USD $1.222175
≥1000 USD $1.037005
≥3000 USD $0.98515

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3

Technical

Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 255W Tc
Element Configuration Single
Power Dissipation 255W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 60V
Current - Continuous Drain (Id) @ 25°C 72A Ta
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 120V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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